NDD60N550U1T4G

Mfr. #:: NDD60N550U1T4G
制造商:: ON Semiconductor
描述:: MOSFET NFET DPAK 600V 8.2A 550MO
生命周期:: 制造商新产品。
数据表:: NDD60N550U1T4G 数据表
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HTML Datasheet:: NDD60N550U1T4G Datasheet NDD60N550U1T4G Datasheet (P4-P6)NDD60N550U1T4G Datasheet (P7-P8)
ECAD Model:

产品属性
属性值

制造商：: 安森美半导体

产品分类：: MOSFET

RoHS：: Y

技术：: 硅

安装方式：: 贴片/贴片

包装/案例：: TO-252-3

打包：: 卷轴

品牌：: 安森美半导体

湿气敏感：: 是的

产品类别：: MOSFET

出厂包装数量：: 2500

子类别：: MOSFET

单位重量：: 0.011993 oz

Tags: NDD60N5, NDD60N, NDD6, NDD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NDD60N550U1T4G 描述

***emi: Power MOSFET 600V 8.2A 550mOhm Single N-Channel DPAK

***et: Trans MOSFET N-CH 600V 8.2A 3-Pin DPAK T/R

***el Electronic: MOSFET NFET DPAK 600V 8.2A 550MO

***nell: MOSFET, N-CH, 600V, 8.2A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.2A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.51ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.2V; Power Dissipation Pd: 94W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

Market price

型号	制造商	描述	库存	价格
NDD60N550U1T4G DISTI # NDD60N550U1T4G-ND	ON Semiconductor	MOSFET N-CH 600V 8.2A DPAK-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
NDD60N550U1T4G DISTI # NDD60N550U1T4G	ON Semiconductor	Trans MOSFET N-CH 600V 8.2A 3-Pin DPAK T/R - Bulk (Alt: NDD60N550U1T4G) Min Qty: 379 Container: Bulk	Americas - 0
NDD60N550U1T4G DISTI # 863-NDD60N550U1T4G	ON Semiconductor	MOSFET NFET DPAK 600V 8.2A 550MO RoHS: Compliant	0
NDD60N550U1T4G	ON Semiconductor	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET RoHS: Compliant	87500	1000:$0.8700 500:$0.9100 100:$0.9500 25:$0.9900 1:$1.0700
NDD60N550U1T4G	ON Semiconductor		1968
NDD60N550U1T4G	ON Semiconductor	600V,8.2A,550m,N-Channel Power MOSFET	1900	1:$1.4600 100:$1.1000 500:$0.9400 1000:$0.8800
NDD60N550U1T4G DISTI # 2774821	ON Semiconductor	MOSFET, N-CH, 600V, 8.2A, TO-252 RoHS: Compliant	2490	500:£0.4320 250:£0.4330 100:£0.4340 25:£0.4970 5:£0.5500

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