SI4814BDY-T1-E3

SI4814BDY-T1-E3
Mfr. #:
SI4814BDY-T1-E3
制造商:
Vishay
描述:
RF Bipolar Transistors MOSFET 30V 10/10.5A 3.5W
生命周期:
制造商新产品。
数据表:
SI4814BDY-T1-E3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商
威世硅
产品分类
FET - 阵列
系列
小脚丫
打包
卷带 (TR)
部分别名
SI4814BDY-E3
单位重量
0.006596 oz
安装方式
贴片/贴片
包装盒
8-SOIC (0.154", 3.90mm Width)
技术
工作温度
-55°C ~ 150°C (TJ)
安装型
表面贴装
通道数
2 Channel
供应商-设备-包
8-SO
配置
双路肖特基二极管
FET型
2 N-Channel (Half Bridge)
最大功率
3.3W, 3.5W
晶体管型
2 N-Channel
漏源电压 Vdss
30V
输入电容-Ciss-Vds
-
FET-Feature
逻辑电平门
Current-Continuous-Drain-Id-25°C
10A, 10.5A
Rds-On-Max-Id-Vgs
18 mOhm @ 10A, 10V
Vgs-th-Max-Id
3V @ 250μA
栅极电荷-Qg-Vgs
10nC @ 4.5V
钯功耗
1.9 W 2 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
秋季时间
11 ns 13 ns
上升时间
11 ns 13 ns
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
7.5 A
Vds-漏-源-击穿电压
30 V
Rds-On-Drain-Source-Resistance
18 mOhms
晶体管极性
N通道
典型关断延迟时间
21 ns 27 ns
典型开启延迟时间
8 ns 9 ns
通道模式
增强
Tags
SI4814BDY-T, SI4814BDY, SI4814B, SI4814, SI481, SI48, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power, Dual N-Channel, 0.0145 Ohms (Channel1), 0.015 Ohms (Channel2)
***et
Trans MOSFET N-CH 30V 7.5A/7.8A 8-Pin SOIC N T/R
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel / Schottky Diode; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:10.5A; On Resistance, Rds(on):18mohm; Rds(on) Test Voltage, Vgs:10V ;RoHS Compliant: Yes
型号 制造商 描述 库存 价格
SI4814BDY-T1-E3
DISTI # SI4814BDY-T1-E3-ND
Vishay SiliconixMOSFET 2N-CH 30V 10A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    SI4814BDY-T1-E3
    DISTI # 70026019
    Vishay SiliconixMOSFET,Power,Dual N-Channel,0.0145 Ohms (Channel1),0.015 Ohms (Channel2)
    RoHS: Compliant
    0
    • 2500:$1.0100
    SI4814BDY-T1-E3
    DISTI # 781-SI4814BDY-E3
    Vishay IntertechnologiesMOSFET 30V 10/10.5A 3.5W
    RoHS: Compliant
    0
      图片 型号 描述
      SI4814BDY-T1-GE3

      Mfr.#: SI4814BDY-T1-GE3

      OMO.#: OMO-SI4814BDY-T1-GE3

      MOSFET RECOMMENDED ALT 781-SI4816BDY-T1-GE3
      SI4814BDY-T1-E3

      Mfr.#: SI4814BDY-T1-E3

      OMO.#: OMO-SI4814BDY-T1-E3

      MOSFET RECOMMENDED ALT 781-SI4816BDY-T1-GE3
      SI4814BDY-T1-GE3

      Mfr.#: SI4814BDY-T1-GE3

      OMO.#: OMO-SI4814BDY-T1-GE3-VISHAY

      RF Bipolar Transistors MOSFET 30V 10/10.5A 18mohm @ 10V
      SI4814BDY-T1-E3

      Mfr.#: SI4814BDY-T1-E3

      OMO.#: OMO-SI4814BDY-T1-E3-VISHAY

      RF Bipolar Transistors MOSFET 30V 10/10.5A 3.5W
      SI4814BD-T1-E3

      Mfr.#: SI4814BD-T1-E3

      OMO.#: OMO-SI4814BD-T1-E3-1190

      全新原装
      SI4814BDY

      Mfr.#: SI4814BDY

      OMO.#: OMO-SI4814BDY-1190

      全新原装
      SI4814BDY-T1-E

      Mfr.#: SI4814BDY-T1-E

      OMO.#: OMO-SI4814BDY-T1-E-1190

      全新原装
      可用性
      库存:
      Available
      订购:
      4000
      输入数量:
      SI4814BDY-T1-E3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格(美元)
      数量
      单价
      小计金额
      1
      US$1.52
      US$1.52
      10
      US$1.44
      US$14.39
      100
      US$1.36
      US$136.35
      500
      US$1.29
      US$643.90
      1000
      US$1.21
      US$1 212.00
      由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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