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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| IRFB59N10DPBF DISTI # IRFB59N10DPBF-ND | Infineon Technologies AG | MOSFET N-CH 100V 59A TO-220AB RoHS: Compliant Min Qty: 1 Container: Tube | 709In Stock |
|
| IRFB59N10DPBF DISTI # SP001560232 | Infineon Technologies AG | Trans MOSFET N-CH 100V 59A 3-Pin(3+Tab) TO-220AB (Alt: SP001560232) RoHS: Compliant Min Qty: 50 | Europe - 3800 |
|
| IRFB59N10DPBF DISTI # IRFB59N10DPBF | Infineon Technologies AG | Trans MOSFET N-CH 100V 59A 3-Pin(3+Tab) TO-220AB (Alt: IRFB59N10DPBF) RoHS: Compliant Min Qty: 3000 | Asia - 0 |
|
| IRFB59N10DPBF DISTI # IRFB59N10DPBF | Infineon Technologies AG | Trans MOSFET N-CH 100V 59A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: IRFB59N10DPBF) Min Qty: 385 Container: Bulk | Americas - 0 |
|
| IRFB59N10DPBF DISTI # IRFB59N10DPBF | Infineon Technologies AG | Trans MOSFET N-CH 100V 59A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB59N10DPBF) RoHS: Compliant Min Qty: 3000 Container: Tube | Americas - 0 |
|
| IRFB59N10DPBF DISTI # 38K2494 | Infineon Technologies AG | MOSFET Transistor, N Channel, 59 A, 100 V, 25 mohm, 10 V, 5.5 V RoHS Compliant: Yes | 106 |
|
| IRFB59N10DPBF DISTI # 70017022 | Infineon Technologies AG | MOSFET,Power,N-Ch,VDSS 100V,RDS(ON) 0.025Ohm,ID 59A,TO-220AB,PD 200W,VGS +/-30V RoHS: Compliant | 1516 |
|
| IRFB59N10DPBF | Infineon Technologies AG | Single N-Channel 100 V 25 mOhm 114 nC HEXFET Power Mosfet - TO-220-3 RoHS: Compliant | 2000Tube |
|
| IRFB59N10DPBF DISTI # 942-IRFB59N10DPBF | Infineon Technologies AG | MOSFET MOSFT 100V 59A 25mOhm 76nC RoHS: Compliant | 984 |
|
| IRFB59N10DPBF | International Rectifier | Power Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 1100 |
|
| IRFB59N10DPBF DISTI # IRFB59N10DPBF | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,100V,59A,200W,TO220AB | 71 |
|
| IRFB59N10DPBF | International Rectifier | RoHS: Compliant | 239 | |
| IRFB59N10DPBF DISTI # 8648786 | Infineon Technologies AG | MOSFET, N, 100V, 59A, TO-220 | 119 |
|
| IRFB59N10DPBF DISTI # 8648786 | Infineon Technologies AG | MOSFET, N, 100V, 59A, TO-220 RoHS: Compliant | 106 |
|
| IRFB59N10DPBF DISTI # XSFP00000030495 | Infineon Technologies AG | RoHS: Compliant | 1600 in Stock0 on Order |
|
| IRFB59N10DPBF DISTI # XSKDRABV0042861 | Infineon Technologies AG | Power Field-EffectTransistor,51AI(D),150V,0.032ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-220AB RoHS: Compliant | 1450 in Stock0 on Order |
|
| IRFB59N10DPBF DISTI # XSKDRABS0006798 | Infineon Technologies AG | Power Field-Effect Transistor,75AI(D),100V,0.01ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-220AB RoHS: Compliant | 1600 in Stock0 on Order |
|
| 图片 | 型号 | 描述 |
|---|---|---|
|
Mfr.#: FB59N100 OMO.#: OMO-FB59N100-1190 |
全新原装 |
|
|
Mfr.#: FB59N10D OMO.#: OMO-FB59N10D-1190 |
全新原装 |