IRGSL4B60KD1PBF

IRGSL4B60KD1PBF
Mfr. #:
IRGSL4B60KD1PBF
制造商:
Infineon / IR
描述:
IGBT Transistors 600V Low-Vceon Non Punch Through
生命周期:
制造商新产品。
数据表:
IRGSL4B60KD1PBF 数据表
交货:
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支付:
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HTML Datasheet:
IRGSL4B60KD1PBF DatasheetIRGSL4B60KD1PBF Datasheet (P4-P6)IRGSL4B60KD1PBF Datasheet (P7-P9)IRGSL4B60KD1PBF Datasheet (P10-P12)IRGSL4B60KD1PBF Datasheet (P13-P15)IRGSL4B60KD1PBF Datasheet (P16)
ECAD Model:
产品属性
属性值
制造商:
英飞凌
产品分类:
IGBT晶体管
RoHS:
Y
技术:
包装/案例:
TO-262-3
安装方式:
通孔
配置:
单身的
集电极-发射极电压 VCEO 最大值:
600 V
集电极-发射极饱和电压:
2.1 V
最大栅极发射极电压:
20 V
25 C 时的连续集电极电流:
11 A
Pd - 功耗:
63 W
最低工作温度:
- 55 C
最高工作温度:
+ 175 C
系列:
RC
打包:
管子
高度:
9.65 mm
长度:
11.3 mm
宽度:
4.83 mm
品牌:
英飞凌/红外
栅极-发射极漏电流:
100 nA
产品类别:
IGBT晶体管
出厂包装数量:
50
子类别:
IGBT
商品名:
战壕
第 # 部分别名:
SP001548286
单位重量:
0.073511 oz
Tags
IRGSL4, IRGSL, IRGS, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
600V Low-Vceon Non Punch Through Copack IGBT in a TO-262 package
***ical
Trans IGBT Chip N-CH 600V 11A 3-Pin(3+Tab) TO-262 Tube
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:11A; Collector Emitter Saturation Voltage, Vce(sat):2.50V; Power Dissipation, Pd:63W; Package/Case:TO-262; C-E Breakdown Voltage:600V ;RoHS Compliant: Yes
型号 制造商 描述 库存 价格
IRGSL4B60KD1PBF
DISTI # IRGSL4B60KD1PBF-ND
Infineon Technologies AGIGBT 600V 11A 63W TO262
RoHS: Compliant
Min Qty: 300
Container: Tube
Limited Supply - Call
    IRGSL4B60KD1PBF
    DISTI # 70018513
    Infineon Technologies AG600V Low-VCEON Non Punch Through COPACK IGBT IN A TO-262 Package
    RoHS: Compliant
    0
    • 300:$2.0800
    IRGSL4B60KD1PBF
    DISTI # 942-IRGSL4B60KD1PBF
    Infineon Technologies AGIGBT Transistors 600V Low-Vceon Non Punch Through
    RoHS: Compliant
    0
      IRGSL4B60KD1PBF
      DISTI # 8640990P
      Infineon Technologies AGIGBT 600V 11A ULTRAFAST DIODE TO-262, TU68
      • 400:£1.1080
      • 200:£1.1730
      • 80:£1.2530
      • 20:£1.4330
      IRGSL4B60KD1PBFInternational Rectifier 150
        图片 型号 描述
        IRGSL4B60KD1PBF

        Mfr.#: IRGSL4B60KD1PBF

        OMO.#: OMO-IRGSL4B60KD1PBF

        IGBT Transistors 600V Low-Vceon Non Punch Through
        IRGSL4B60KD1PBF

        Mfr.#: IRGSL4B60KD1PBF

        OMO.#: OMO-IRGSL4B60KD1PBF-INFINEON-TECHNOLOGIES

        IGBT Transistors 600V Low-Vceon Non Punch Through
        可用性
        库存:
        Available
        订购:
        3000
        输入数量:
        IRGSL4B60KD1PBF的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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