NUS5530MNR2G

Mfr. #:: NUS5530MNR2G
制造商:: ON Semiconductor
描述:: IGBT Transistors MOSFET INTEGRATED POWER BJT
生命周期:: 制造商新产品。
数据表:: NUS5530MNR2G 数据表
交货:: DHL FedEx Ups TNT EMS
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产品属性
属性值

制造商: 安森美半导体

产品分类: 晶体管 - 特殊用途

系列: NUS5530MN

打包: 切割胶带 (CT) 替代包装

单位重量: 0.001319 oz

安装方式: 贴片/贴片

目前评级: 2A PNP, 3.9A P-Channel

包装盒: 8-VDFN Exposed Pad

技术: 硅

安装型: 表面贴装

额定电压: 35V PNP, 20V P-Channel

应用: 一般用途

供应商-设备-包: 8-DFN-EP (3.3x3.3)

晶体管型: NPN、P 沟道

钯功耗: 635 mW

VGS-栅极-源极-电压: - 35 V

Id 连续漏极电流: - 3.9 A

Vds-漏-源-击穿电压: - 20 V

Rds-On-Drain-Source-Resistance: 200 Ohms

晶体管极性: P-通道

正向跨导最小值: 12 S

Tags: NUS5, NUS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NUS5530MNR2G 描述

***ied Electronics & Automation: ON Semi NUS5530MNR2G Dual PNP Bipolar Transistor; 2 A; 35 V; 8-Pin DFN

***th Star Micro: NUS5530MN: Integrated Power MOSFET 20V 3.9A 60 mOhm Dual P-Channel with PNP Low VCE Switching Transistor DFN8

***ark: Transistor,mos-Bjt Power Module,independent,35V V(Br)Ceo,2A I(C)

***et: Integrated Power MOSFET with PNP 8-Pin DFN EP T/R

***ser: Transistors Bipolar- Bias Resistor INTEGRATED POWER BJT

***i-Key: IC MOSFET W/PNP SW TRANS 8-DFN

Market price

型号	制造商	描述	库存	价格
NUS5530MNR2G DISTI # V36:1790_07283721	ON Semiconductor	Integrated Power MOSFET with PNP 8-Pin DFN EP T/R RoHS: Compliant	0
NUS5530MNR2G DISTI # NUS5530MNR2GOSTR-ND	ON Semiconductor	IC MOSFET W/PNP SW TRANS 8-DFN RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.6031
NUS5530MNR2G DISTI # NUS5530MNR2G	ON Semiconductor	Integrated Power MOSFET with PNP 8-Pin DFN EP T/R - Tape and Reel (Alt: NUS5530MNR2G) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.4829 6000:$0.4799 12000:$0.4739 18000:$0.4679 30000:$0.4559
NUS5530MNR2G DISTI # NUS5530MNR2G	ON Semiconductor	Integrated Power MOSFET with PNP 8-Pin DFN EP T/R - Bulk (Alt: NUS5530MNR2G) RoHS: Compliant Min Qty: 610 Container: Bulk	Americas - 0	610:$0.5349 612:$0.5319 1222:$0.5249 3050:$0.5179 6100:$0.5059
NUS5530MNR2G DISTI # 70465550	ON Semiconductor	ON Semi NUS5530MNR2G Dual PNP Bipolar Transistor,2 A,35 V,8-Pin DFN RoHS: Compliant	0	20:$0.5300 50:$0.5200 100:$0.5100 500:$0.5000
NUS5530MNR2G DISTI # 863-NUS5530MNR2G	ON Semiconductor	MOSFET INTEGRATED POWER BJT RoHS: Compliant	0	3000:$0.4930 9000:$0.4740
NUS5530MNR2G	ON Semiconductor	Power Field-Effect Transistor, 3.9A I(D), 20V, 0.083ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	105255	1000:$0.5400 500:$0.5700 100:$0.5900 25:$0.6200 1:$0.6600
NUS5530MNR2G	ON Semiconductor		1780

图片	型号	描述
	Mfr.#: NUS5530MNR2G OMO.#: OMO-NUS5530MNR2G	MOSFET INTEGRATED POWER BJT
	Mfr.#: NUS5530MN OMO.#: OMO-NUS5530MN-1190	全新原装
	Mfr.#: NUS5531MTR2G OMO.#: OMO-NUS5531MTR2G-ON-SEMICONDUCTOR	MOSFET/BJT SGL P-CH 12V 8-WDFN
	Mfr.#: NUS5530MNR2G OMO.#: OMO-NUS5530MNR2G-ON-SEMICONDUCTOR	IGBT Transistors MOSFET INTEGRATED POWER BJT

NUS5530MNR2G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes