IRF8313TRPBF

Mfr. #:: IRF8313TRPBF
制造商:: Infineon Technologies
描述:: MOSFET 2N-CH 30V 9.7A 8-SOIC
生命周期:: 制造商新产品。
数据表:: IRF8313TRPBF 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: IRF8313TRPBF 更多信息

产品属性
属性值

制造商: 红外线

产品分类: FET - 阵列

系列: 十六进制

打包: Digi-ReelR 替代包装

单位重量: 0.019048 oz

安装方式: 贴片/贴片

包装盒: 8-SOIC (0.154", 3.90mm Width)

技术: 硅

工作温度: -55°C ~ 175°C (TJ)

安装型: 表面贴装

通道数: 2 Channel

供应商-设备-包: 8-SO

配置: 双重的

FET型: 2 N-Channel (Dual)

最大功率: 2W

晶体管型: 2 N-Channel

漏源电压 Vdss: 30V

输入电容-Ciss-Vds: 760pF @ 15V

FET-Feature: 逻辑电平门

Current-Continuous-Drain-Id-25°C: 9.7A

Rds-On-Max-Id-Vgs: 15.5 mOhm @ 9.7A, 10V

Vgs-th-Max-Id: 2.35V @ 25μA

栅极电荷-Qg-Vgs: 9nC @ 4.5V

钯功耗: 2 W

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 9.7 A

Vds-漏-源-击穿电压: 30 V

Rds-On-Drain-Source-Resistance: 21.6 mOhms

晶体管极性: N通道

Qg-门电荷: 6 nC

Tags: IRF8313TRP, IRF8313T, IRF8313, IRF831, IRF83, IRF8, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF8313TRPBF 描述

***Components: In a Pack of 20, Dual N-Channel MOSFET, 9.7 A, 30 V, 8-Pin SOIC Infineon IRF8313TRPBF

***ure Electronics: Dual N-Channel 30 V 21.6 mOhm 9 nC HEXFET® Power Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 30V 9.7A 8-Pin SOIC T/R

***ernational Rectifier: 30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

***ineon: Benefits: RoHS Compliant; Low RDS(on); Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Dual N-Channel MOSFET

***i-Key: MOSFET N-CH DUAL 30V 9.7A 8-SOIC

***ied Electronics & Automation: MOSFET, DUAL N-CHANNEL, 30V, 9.7A, SO-8

***ukat: 2xN-Ch 30V 9,7A 2,0W 0,0155R SO8

***ark: Transistor Polarity:dual N Channel; Continuous Drain Current Id:9.7A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0125Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:2W; No. Of Pins:8Pinsrohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, DUAL N CH, 30V, 9.7A, SOIC-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:9.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0125ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, DOPPIO CAN. N, 30V, 9.7A, SOIC-8; Polarità Transistor:Canale N Doppio; Corrente Continua di Drain Id:9.7A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0125ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.8V; Dissipazione di Potenza Pd:2W; Modello Case Transistor:SOIC; No. di Pin:8Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

IRF8313TRPBF 更多信息

30V HEXFET® Power MOSFETs: Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More

Market price

型号	制造商	描述	库存	价格
IRF8313TRPBF DISTI # V72:2272_13890321	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC T/R RoHS: Compliant	7715	6000:$0.2216 3000:$0.2540 1000:$0.2545 500:$0.3033 250:$0.3042 100:$0.3051 25:$0.4214 10:$0.4235 1:$0.4854
IRF8313TRPBF DISTI # IRF8313TRPBFCT-ND	Infineon Technologies AG	MOSFET 2N-CH 30V 9.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	18648In Stock	1000:$0.3542 500:$0.4341 100:$0.5739 10:$0.7340 1:$0.8300
IRF8313TRPBF DISTI # IRF8313TRPBFDKR-ND	Infineon Technologies AG	MOSFET 2N-CH 30V 9.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	18648In Stock	1000:$0.3542 500:$0.4341 100:$0.5739 10:$0.7340 1:$0.8300
IRF8313TRPBF DISTI # IRF8313TRPBFTR-ND	Infineon Technologies AG	MOSFET 2N-CH 30V 9.7A 8-SOIC RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	16000In Stock	4000:$0.3168
IRF8313TRPBF DISTI # 31228817	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC T/R RoHS: Compliant	24000	4000:$0.1910
IRF8313TRPBF DISTI # 30571752	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC T/R RoHS: Compliant	7715	6000:$0.2216 3000:$0.2540 1000:$0.2545 500:$0.3033 250:$0.3042 100:$0.3051 36:$0.4214
IRF8313TRPBF DISTI # SP001577640	Infineon Technologies AG	Trans MOSFET N-CH 30V 9.7A 8-Pin SOIC T/R (Alt: SP001577640) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Europe - 4000	4000:€0.2769 8000:€0.2269 16000:€0.2079 24000:€0.1919 40000:€0.1779
IRF8313TRPBF DISTI # IRF8313TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 9.7A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF8313TRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.2039 8000:$0.1969 16000:$0.1899 24000:$0.1829 40000:$0.1799
IRF8313TRPBF DISTI # IRF8313TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 9.7A 8-Pin SOIC T/R (Alt: IRF8313TRPBF) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Asia - 0
IRF8313TRPBF DISTI # 42Y0424	Infineon Technologies AG	Dual MOSFET, Dual N Channel, 9.7 A, 30 V, 0.0125 ohm, 10 V, 1.8 V RoHS Compliant: Yes	3489	1:$0.7680 10:$0.6390 25:$0.5690 50:$0.4980 100:$0.4270 250:$0.4010 500:$0.3760 1000:$0.3500
IRF8313TRPBF. DISTI # 27AC6909	Infineon Technologies AG	Transistor Polarity:Dual N Channel,Continuous Drain Current Id:9.7A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0125ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,Power Dissipation Pd:2W,No. of Pins:8PinsRoHS Compliant: Yes	0
IRF8313TRPBF DISTI # 70018020	Infineon Technologies AG	IRF8313TRPBF Dual N-channel MOSFET Transistor,9.7 A,30 V,8-Pin SOIC RoHS: Compliant	0	4000:$0.6800
IRF8313TRPBF DISTI # 942-IRF8313TRPBF	Infineon Technologies AG	MOSFET MOSFT DUAL NCh 30V 9.7A RoHS: Compliant	16922	1:$0.6700 10:$0.5510 100:$0.3550 1000:$0.2840 4000:$0.2400 8000:$0.2310 24000:$0.2220
IRF8313TRPBF	International Rectifier	9.7 A, 30 V, 0.0155 OHM, 2 CHANNEL, N-CHANNEL, SI, POWER, MOSFET, MS-012AA	1095	273:$0.5874 69:$0.7343 1:$1.4685
IRF8313TRPBF DISTI # 8273903P	Infineon Technologies AG	HEXFET N-CH MOSFET 9.7A 30V SOIC8, RL	2520	100:£0.2600 500:£0.2350 2000:£0.2060 4000:£0.1740
IRF8313TRPBF DISTI # IRF8313PBF-GURT	Infineon Technologies AG	2xN-Ch 30V 9,7A 2,0W 0,0155R SO8 RoHS: Compliant	2600	50:€0.2460 100:€0.2060 500:€0.1860 2000:€0.1790
IRF8313TRPBF DISTI # XSLY00000000869	INFINEON/IR	SO-8 RoHS: Compliant	4000	4000:$0.2200
IRF8313TRPBF DISTI # C1S322000487013	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC T/R RoHS: Compliant	7975	4000:$0.2400
IRF8313TRPBF DISTI # C1S322000487004	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC T/R RoHS: Compliant	7715	250:$0.3042 100:$0.3051 25:$0.4214 10:$0.4235
IRF8313TRPBF DISTI # 2468027	Infineon Technologies AG	MOSFET, DUAL N CH, 30V, 9.7A, SOIC-8 RoHS: Compliant	2789	5:£0.4370 25:£0.3490 100:£0.2650 250:£0.2530 500:£0.2400
IRF8313TRPBF DISTI # 2468027	Infineon Technologies AG	MOSFET, DUAL N CH, 30V, 9.7A, SOIC-8 RoHS: Compliant	3519	1:$1.0700 10:$0.8720 100:$0.5620 1000:$0.4500 4000:$0.3810 8000:$0.3660 24000:$0.3560
IRF8313TRPBF DISTI # 2468027RL	Infineon Technologies AG	MOSFET, DUAL N CH, 30V, 9.7A, SOIC-8 RoHS: Compliant	0	1:$1.0700 10:$0.8720 100:$0.5620 1000:$0.4500 4000:$0.3810 8000:$0.3660 24000:$0.3560

图片	型号	描述
	Mfr.#: IRF8313TRPBF OMO.#: OMO-IRF8313TRPBF	MOSFET MOSFT DUAL NCh 30V 9.7A
	Mfr.#: IRF8313PBF OMO.#: OMO-IRF8313PBF	MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC
	Mfr.#: IRF8313TRPBF-CUT TAPE OMO.#: OMO-IRF8313TRPBF-CUT-TAPE-1190	全新原装
	Mfr.#: IRF831 OMO.#: OMO-IRF831-1190	Power Field-Effect Transistor, 4.5A I(D), 450V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
	Mfr.#: IRF8313 OMO.#: OMO-IRF8313-1190	全新原装
	Mfr.#: IRF8313PBF OMO.#: OMO-IRF8313PBF-INFINEON-TECHNOLOGIES	Trans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube
	Mfr.#: IRF8313TRPBF OMO.#: OMO-IRF8313TRPBF-INFINEON-TECHNOLOGIES	MOSFET 2N-CH 30V 9.7A 8-SOIC
	Mfr.#: IRF8313TRPBFINFINEON OMO.#: OMO-IRF8313TRPBFINFINEON-1190	全新原装
	Mfr.#: IRF831P OMO.#: OMO-IRF831P-1190	全新原装
	Mfr.#: IRF831PBF OMO.#: OMO-IRF831PBF-1190	全新原装

IRF8313TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes