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IXTP1N120P

IXTP1N120P
Mfr. #:
IXTP1N120P
制造商:
Littelfuse
描述:
MOSFET 1 Amps 1200V 20 Rds
生命周期:
制造商新产品。
数据表:
IXTP1N120P 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTP1N120P DatasheetIXTP1N120P Datasheet (P4)
ECAD Model:
产品属性
属性值
制造商：
IXYS
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-220-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
1.2 kV
Id - 连续漏极电流：
1 A
Rds On - 漏源电阻：
20 Ohms
Vgs - 栅源电压：
20 V
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
63 W
配置：
单身的
频道模式：
增强
打包：
管子
高度：
9.15 mm
长度：
10.66 mm
系列：
IXTP1N120
晶体管类型：
1 N-Channel
宽度：
4.82 mm
品牌：
IXYS
秋季时间：
27 ns
产品类别：
MOSFET
上升时间：
28 ns
出厂包装数量：
50
子类别：
MOSFET
典型关断延迟时间：
54 ns
典型的开启延迟时间：
20 ns
单位重量：
0.081130 oz
Tags
IXTP1N1, IXTP1N, IXTP1, IXTP, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
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***S.I.T. Europe - USA - Asia
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***emi
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Trans MOSFET N-CH 900V 6A 3-Pin(3+Tab) TO-220FP Rail
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900V 6A 56W 2.3´Î@10V3A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
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***trelec
MOSFET Operating temperature: -55...150 °C Housing type: TO-220 Polarity: N Variants: Enhancement mode Power dissipation: 56 W
*** Stop Electro
Power Field-Effect Transistor, 6A I(D), 900V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***nell
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型号 制造商 描述 库存 价格
IXTP1N120P
DISTI # IXTP1N120P-ND		IXYS CorporationMOSFET N-CH 1200V 1A TO-220
RoHS: Compliant
Min Qty: 50
Container: Tube		Temporarily Out of Stock
  • 50:$2.9700
IXTP1N120P
DISTI # 747-IXTP1N120P		IXYS CorporationMOSFET 1 Amps 1200V 20 Rds
RoHS: Compliant		519
  • 1:$3.8600
  • 10:$3.4500
  • 25:$3.0000
  • 50:$2.9400
  • 100:$2.8300
  • 250:$2.4200
  • 500:$2.2900
  • 1000:$1.9300
  • 2500:$1.6600
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可用性
库存:
519
订购:
2502
输入数量:
IXTP1N120P的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$3.86
US$3.86
10
US$3.45
US$34.50
25
US$3.00
US$75.00
50
US$2.94
US$147.00
100
US$2.83
US$283.00
250
US$2.42
US$605.00
500
US$2.29
US$1 145.00
1000
US$1.93
US$1 930.00
2500
US$1.66
US$4 150.00
由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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