 |  | | |
| PartNumber | 2DB1182Q-13 | 2DB1184Q | 2DB1182Q |
| Description | Bipolar Transistors - BJT 32V PNP Trans -40V 10W -32V VCEO -2A | ||
| Manufacturer | Diodes Incorporated | DIDEOS | DIODES INC. |
| Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single | Transistors (BJT) - Single |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TO-252-3 | - | - |
| Transistor Polarity | PNP | - | PNP |
| Configuration | Single | - | Single |
| Collector Emitter Voltage VCEO Max | - 32 V | - | - |
| Collector Base Voltage VCBO | - 40 V | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Collector Emitter Saturation Voltage | - 0.8 V | - | - 0.8 V |
| Maximum DC Collector Current | - 3 A | - | - 3 A |
| Gain Bandwidth Product fT | 110 MHz | - | 110 MHz |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Series | 2DB11 | - | 2DB11 |
| DC Current Gain hFE Max | 270 at - 500 mA, - 3 V | - | 270 at - 0.5 A at - 3 V |
| Packaging | Reel | - | Reel |
| Brand | Diodes Incorporated | - | - |
| DC Collector/Base Gain hfe Min | 120 | - | - |
| Pd Power Dissipation | 10 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.139332 oz | - | 0.139332 oz |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 10 W |
| Collector Emitter Voltage VCEO Max | - | - | - 32 V |
| Collector Base Voltage VCBO | - | - | - 40 V |
| Emitter Base Voltage VEBO | - | - | - 5 V |
| DC Collector Base Gain hfe Min | - | - | 120 at - 0.5 A at - 3 V |