2SC536NF-NPA-AT vs 2SC536N vs 2SC536NF

 
PartNumber2SC536NF-NPA-AT2SC536N2SC536NF
DescriptionBipolar Transistors - BJT BIP NPN 0.15A 50V
ManufacturerON SemiconductorSANYO-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-92-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max50 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage0.3 V--
Maximum DC Collector Current400 mA--
Gain Bandwidth Product fT200 MHz--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max320--
PackagingReel--
BrandON Semiconductor--
Continuous Collector Current150 mA--
DC Collector/Base Gain hfe Min160--
Pd Power Dissipation500 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1500--
SubcategoryTransistors--
Unit Weight0.016000 oz--
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