2STC4467 vs 2STC2510 vs 2STC4468

 
PartNumber2STC44672STC25102STC4468
DescriptionBipolar Transistors - BJT High power NPN Bipolar transistorBipolar Transistors - BJT High power NPN Bipolar transistorTRANS NPN 140V 10A TO-3P
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-3P-3TO-3P-3-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max120 V100 V-
Collector Base Voltage VCBO120 V100 V-
Emitter Base Voltage VEBO6 V6 V-
Maximum DC Collector Current8 A25 A-
Gain Bandwidth Product fT20 MHz20 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Series2STC44672STC2510-
DC Current Gain hFE Max7040-
Height15.1 mm18.7 mm-
Length15.8 mm15.8 mm (Max)-
PackagingTubeTube-
Width5 mm5 mm (Max)-
BrandSTMicroelectronicsSTMicroelectronics-
DC Collector/Base Gain hfe Min70 at 3 A, 4 V40-
Pd Power Dissipation80000 mW125000 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity300300-
SubcategoryTransistorsTransistors-
Unit Weight0.238311 oz0.238311 oz-
Shipping Restrictions--
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