 |  |  | |
| PartNumber | DMHC10H170SFJ-13 | DMHC3025LSD-13 | DMHC3025LSD |
| Description | MOSFET 100V Comp Enh FET 20Vgs w/ H-Bridge | MOSFET 30V Comp ENH Mode H-Bridge 20V VGSS | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | V-DFN5045-12 | SO-8 | - |
| Number of Channels | 4 Channel | 4 Channel | - |
| Transistor Polarity | N-Channel, P-Channel | N-Channel, P-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 30 V | - |
| Id Continuous Drain Current | 2.9 A, 2.3 A | 6 A, 4.2 A | - |
| Rds On Drain Source Resistance | 111 mOhms, 191 mOhms | 25 mOhms, 50 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V, 3 V | 1 V | - |
| Vgs Gate Source Voltage | 20 V | 10 V | - |
| Qg Gate Charge | 9.7 nC, 17.5 nC | 11.7 nC, 11.4 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2.1 W | 1.5 W | - |
| Configuration | Quad | Quad | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Series | DMHC10H | DMHC3025 | - |
| Transistor Type | 2 N-Channel, 2 P-Channel | 2 N-Channel, 2 P-Channel | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Forward Transconductance Min | - | - | - |
| Fall Time | 12.8 ns, 34.4 ns | 8.7 ns, 13.5 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 11.1 ns, 14.9 ns | 15 ns, 4.9 ns | - |
| Factory Pack Quantity | 3000 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 42.6 ns, 57.4 ns | 17.5 ns, 28.2 ns | - |
| Typical Turn On Delay Time | 10.5 ns, 9.1 ns | 11.2 ns, 7.5 ns | - |
| Unit Weight | - | 0.002610 oz | - |