FDP040N06 vs FDP045N10 vs FDP045N10A

 
PartNumberFDP040N06FDP045N10FDP045N10A
DescriptionMOSFET PT3 Low Qg 60V, 4.0MohmMOSFET N-CH 100V 120A TO-220-3
ManufacturerON SemiconductorFAIRCHILD-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiMOSFET (Metal Oxide)-
Mounting StyleThrough Hole--
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current168 A--
Rds On Drain Source Resistance3.2 mOhms--
Vgs th Gate Source Threshold Voltage4.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge102 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation231 W--
ConfigurationSingle--
PackagingTubeTube-
Height16.3 mm--
Length10.67 mm--
SeriesFDP040N06PowerTrench-
Transistor Type1 N-Channel--
TypeN-Channel Power Trench MOSFET--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min169 S--
Fall Time24 ns--
Product TypeMOSFET--
Rise Time40 ns--
Factory Pack Quantity400--
SubcategoryMOSFETs--
Typical Turn Off Delay Time55 ns--
Typical Turn On Delay Time30 ns--
Unit Weight0.063493 oz--
Part Status-Obsolete-
FET Type-N-Channel-
Drain to Source Voltage (Vdss)-100V-
Current Continuous Drain (Id) @ 25°C-120A (Tc)-
Drive Voltage (Max Rds On, Min Rds On)-10V-
Vgs(th) (Max) @ Id-4V @ 250A-
Gate Charge (Qg) (Max) @ Vgs-74nC @ 10V-
Vgs (Max)-±20V-
Input Capacitance (Ciss) (Max) @ Vds-5270pF @ 50V-
FET Feature---
Power Dissipation (Max)-263W (Tc)-
Rds On (Max) @ Id, Vgs-4.5 mOhm @ 100A, 10V-
Operating Temperature--55°C ~ 175°C (TJ)-
Mounting Type-Through Hole-
Supplier Device Package-TO-220-3-
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