 |  |  | |
| PartNumber | IRF710 | IRF7101PBF | IRF7101 |
| Description | MOSFET RECOMMENDED ALT 844-IRF710PBF | MOSFET 20V DUAL N-CH HEXFET 100mOhms 10nC | HEXFET N-CH MOSFET 3.5A 20V SOIC8, RL |
| Manufacturer | Vishay | Infineon | IR |
| Product Category | MOSFET | MOSFET | FETs - Arrays |
| RoHS | N | Y | - |
| Technology | Si | Si | - |
| Packaging | Tube | Tube | - |
| Series | IRF | - | - |
| Brand | Vishay / Siliconix | Infineon / IR | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 50 | 95 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.211644 oz | 0.019048 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | SO-8 | - |
| Number of Channels | - | 2 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 3.5 A | - |
| Rds On Drain Source Resistance | - | 150 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 3 V | - |
| Vgs Gate Source Voltage | - | 12 V | - |
| Qg Gate Charge | - | 10 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 2 W | - |
| Configuration | - | Dual | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 1.75 mm | - |
| Length | - | 4.9 mm | - |
| Transistor Type | - | 2 N-Channel | - |
| Type | - | HEXFET Power MOSFET | - |
| Width | - | 3.9 mm | - |
| Forward Transconductance Min | - | 1.1 S | - |
| Fall Time | - | 30 ns | - |
| Rise Time | - | 10 ns | - |
| Typical Turn Off Delay Time | - | 24 ns | - |
| Typical Turn On Delay Time | - | 7 ns | - |
| Part # Aliases | - | SP001559728 | - |