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| PartNumber | IRF840ASPBF | IRF840AS | IRF840ASTRL |
| Description | MOSFET N-CH 500V HEXFET MOSFET D2-PA | MOSFET N-CH 500V 8A D2PAK | MOSFET N-CH 500V 8A D2PAK |
| Manufacturer | Vishay | IR | VISHAY |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | E | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Id Continuous Drain Current | 8 A | - | - |
| Rds On Drain Source Resistance | 850 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 38 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 125 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Tube | - | Reel |
| Height | 4.83 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | IRF | - | - |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 9.65 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 3.7 S | - | - |
| Fall Time | 19 ns | - | 19 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 23 ns | - | 23 ns |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 26 ns | - | 26 ns |
| Typical Turn On Delay Time | 11 ns | - | 11 ns |
| Unit Weight | 0.050717 oz | - | 0.050717 oz |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 3.1 W |
| Vgs Gate Source Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 8 A |
| Vds Drain Source Breakdown Voltage | - | - | 500 V |
| Rds On Drain Source Resistance | - | - | 850 mOhms |