IRGP4262D-EPBF vs IRGP4263EPBF vs IRGP4262DPBF

 
PartNumberIRGP4262D-EPBFIRGP4263EPBFIRGP4262DPBF
DescriptionIGBT Transistors 650V Lo VCEon Trench Co-Pack IGBTIGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT
ManufacturerInfineon-Infineon Technologies
Product CategoryIGBT Transistors-IGBTs - Single
RoHSY--
TechnologySi--
PackagingTube-Tube
BrandInfineon / IR--
Product TypeIGBT Transistors--
Factory Pack Quantity25--
SubcategoryIGBTs--
Part # AliasesSP001549768--
Series---
Mounting Style--Through Hole
Package Case--TO-247-3
Input Type--Standard
Mounting Type--Through Hole
Supplier Device Package--TO-247AC
Configuration--Single
Power Max--250W
Reverse Recovery Time trr--170ns
Current Collector Ic Max--60A
Voltage Collector Emitter Breakdown Max--650V
IGBT Type---
Current Collector Pulsed Icm--96A
Vce on Max Vge Ic--2.1V @ 15V, 24A
Switching Energy--520μJ (on), 240μJ (off)
Gate Charge--70nC
Td on off 25°C--24ns/73ns
Test Condition--400V, 24A, 10 Ohm, 15V
Pd Power Dissipation--250 W
Maximum Operating Temperature--+ 175 C
Minimum Operating Temperature--- 40 C
Collector Emitter Voltage VCEO Max--650 V
Collector Emitter Saturation Voltage--1.7 V
Continuous Collector Current at 25 C--60 A
Gate Emitter Leakage Current--100 nA
Maximum Gate Emitter Voltage--20 V
Continuous Collector Current Ic Max--60 A
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