 | | | |
| PartNumber | IXFN32N100P | IXFN320N17T2 | IXFN32N100Q3 |
| Description | MOSFET 32 Amps 1000V 0.32 Rds | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/28A |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
| Package / Case | SOT-227-4 | SOT-227-4 | SOT-227-4 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 1 kV | 170 V | 1 kV |
| Id Continuous Drain Current | 27 A | 260 A | 28 A |
| Rds On Drain Source Resistance | 320 mOhms | 5.2 mOhms | 320 mOhms |
| Vgs th Gate Source Threshold Voltage | 6.5 V | 5 V | - |
| Vgs Gate Source Voltage | 30 V | 20 V | 30 V |
| Qg Gate Charge | 225 nC | 640 nC | 195 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 175 C | + 150 C |
| Pd Power Dissipation | 690 W | 1.07 kW | 780 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | HiPerFET | HiPerFET | HiPerFET |
| Packaging | Tube | Tube | Tube |
| Height | 12.22 mm | - | - |
| Length | 38.23 mm | - | - |
| Series | IXFN32N100 | IXFN320N17 | IXFN32N1003 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | Polar Power MOSFET HiPerFET | GigaMOS Trench T2 HiperFet | - |
| Width | 25.42 mm | - | - |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 13 S | 120 S | - |
| Fall Time | 43 ns | 230 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 55 ns | 170 ns | 300 ns |
| Factory Pack Quantity | 10 | 10 | 10 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 76 ns | 115 ns | - |
| Typical Turn On Delay Time | 50 ns | 46 ns | - |
| Unit Weight | 1.058219 oz | 1.058219 oz | 1.058219 oz |