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| PartNumber | IXFX320N17T2 | IXFX32N100Q3 | IXFX32N100P |
| Description | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/32A | MOSFET 32 Amps 1000V 0.32 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | PLUS-247 | TO-247-3 | TO-247-3 |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
| Pd Power Dissipation | 1670 W | 1.25 kW | 960 W |
| Tradename | HiPerFET | HiPerFET | HiPerFET |
| Packaging | Tube | Tube | Tube |
| Product | MOSFET Gate Drivers | - | - |
| Series | IXFX320N17 | IXFX32N100 | IXFX32N100 |
| Brand | IXYS | IXYS | IXYS |
| Fall Time | 230 ns | - | 43 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 170 ns | 250 ns | 55 ns |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.232808 oz | 0.056438 oz | 0.056438 oz |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 1 kV | 1 kV |
| Id Continuous Drain Current | - | 32 A | 32 A |
| Rds On Drain Source Resistance | - | 320 mOhms | 320 mOhms |
| Vgs Gate Source Voltage | - | 30 V | 30 V |
| Qg Gate Charge | - | 195 nC | 225 nC |
| Configuration | - | Single | Single |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Vgs th Gate Source Threshold Voltage | - | - | 6.5 V |
| Channel Mode | - | - | Enhancement |
| Height | - | - | 21.34 mm |
| Length | - | - | 16.13 mm |
| Type | - | - | Polar Power MOSFET HiPerFET |
| Width | - | - | 5.21 mm |
| Forward Transconductance Min | - | - | 13 S |
| Typical Turn Off Delay Time | - | - | 76 ns |
| Typical Turn On Delay Time | - | - | 50 ns |