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| PartNumber | IXTY26P10T-TRL | IXTY26P10T | IXTY24N15T |
| Description | Discrete Semiconductor Modules TrenchP Power MOSFET | MOSFET TrenchP Power MOSFET | MOSFET N-CH 150V 24A TO-252 |
| Manufacturer | IXYS | IXYS | - |
| Product Category | Discrete Semiconductor Modules | MOSFET | - |
| RoHS | Y | Y | - |
| Product | Power MOSFET Modules | - | - |
| Type | TrenchP | TrenchP Power MOSFET | - |
| Vgs Gate Source Voltage | 15 V | 15 V | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Packaging | Reel | Tube | - |
| Configuration | Single | - | - |
| Brand | IXYS | IXYS | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Fall Time | 11 ns | 11 ns | - |
| Id Continuous Drain Current | - 26 A | 26 A | - |
| Pd Power Dissipation | 150 W | 150 W | - |
| Product Type | Discrete Semiconductor Modules | MOSFET | - |
| Rds On Drain Source Resistance | 90 mOhms | 90 mOhms | - |
| Rise Time | 15 ns | 15 ns | - |
| Factory Pack Quantity | 2500 | 70 | - |
| Subcategory | Discrete Semiconductor Modules | MOSFETs | - |
| Tradename | TrenchP | TrenchP | - |
| Typical Turn Off Delay Time | 37 ns | 37 ns | - |
| Typical Turn On Delay Time | 20 ns | 20 ns | - |
| Vds Drain Source Breakdown Voltage | - 100 V | 100 V | - |
| Vgs th Gate Source Threshold Voltage | - 4.5 V | 4.5 V | - |
| Technology | - | Si | - |
| Qg Gate Charge | - | 52 nC | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 2.38 mm | - |
| Length | - | 6.22 mm | - |
| Series | - | IXTY26P10 | - |
| Width | - | 6.73 mm | - |
| Forward Transconductance Min | - | 10 S | - |
| Unit Weight | - | 0.081130 oz | - |