R6012ANJTL vs R6012AN vs R6012ANJ

 
PartNumberR6012ANJTLR6012ANR6012ANJ
DescriptionMOSFET TRANS MOSFET NCH 600V 12A 3PIN
ManufacturerROHM Semiconductor-ROHM Semiconductor
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current12 A--
Rds On Drain Source Resistance320 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge35 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation100 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel-Reel
Transistor Type1 N-Channel-1 N-Channel
BrandROHM Semiconductor--
Fall Time35 ns--
Product TypeMOSFET--
Rise Time30 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time90 ns--
Typical Turn On Delay Time30 ns--
Part # AliasesR6012ANJ--
Unit Weight0.077603 oz--
Series--R6012ANJ
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