RMP2N60IP vs RMP2N60LD-T vs RMP2N60LD

 
PartNumberRMP2N60IPRMP2N60LD-TRMP2N60LD
DescriptionMOSFET TO-251 MOSFETMOSFET D-PAK MOSFET
ManufacturerRectronRectron-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleSMD/SMT-
Package / CaseTO-251-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current2 A2 A-
Rds On Drain Source Resistance4.5 Ohms4.5 Ohms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge14 nC14 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation44 W44 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeReel-
Transistor Type1 N-Channel1 N-Channel-
BrandRectronRectron-
Forward Transconductance Min2 S2 S-
Fall Time45 ns45 ns-
Product TypeMOSFETMOSFET-
Rise Time50 ns50 ns-
Factory Pack Quantity8002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time40 ns40 ns-
Typical Turn On Delay Time16 ns16 ns-
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