RN1102MFV(TPL3) vs RN1102MFV vs RN1102MFV(TL3

 
PartNumberRN1102MFV(TPL3)RN1102MFVRN1102MFV(TL3
DescriptionBipolar Transistors - Pre-Biased 100mA 50volts 3Pin 10K x 10Kohms
ManufacturerToshibaTOSHIBA-
Product CategoryBipolar Transistors - Pre-BiasedTransistors (BJT) - Single, Pre-Biased-
RoHSY--
ConfigurationSingle--
Transistor PolarityNPN--
Typical Input Resistor10 kOhms--
Typical Resistor Ratio1--
Mounting StyleSMD/SMT--
DC Collector/Base Gain hfe Min50--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current100 mA--
Peak DC Collector Current100 mA--
Pd Power Dissipation150 mW--
Maximum Operating Temperature+ 150 C--
SeriesRN1102--
PackagingReel--
DC Current Gain hFE Max50--
BrandToshiba--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity8000--
SubcategoryTransistors--
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