RXH125N03TB1 vs RXH125N03 vs RXH125N03TB

 
PartNumberRXH125N03TB1RXH125N03RXH125N03TB
DescriptionMOSFET RECOMMENDED ALT 755-RS3E135BNGZETB
ManufacturerROHM Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOP-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current12.5 A--
Rds On Drain Source Resistance7.5 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge12.7 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
SeriesRXH125N03--
Transistor Type1 N-Channel--
BrandROHM Semiconductor--
Fall Time18 ns--
Product TypeMOSFET--
Rise Time20 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time55 ns--
Typical Turn On Delay Time12 ns--
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