SI7463DP-T1-E3 vs SI7463DP-T1-GE3 vs SI7463DP

 
PartNumberSI7463DP-T1-E3SI7463DP-T1-GE3SI7463DP
DescriptionMOSFET 40V 18.6A 5.4W 9.2mohm @ 10VMOSFET 40V 18.6A 5.4W 9.2mohm @ 10V
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSEY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-SO-8PowerPAK-SO-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current18.6 A18.6 A-
Rds On Drain Source Resistance9.2 mOhms9.2 mOhms-
Vgs th Gate Source Threshold Voltage1 V1 V-
Vgs Gate Source Voltage10 V10 V-
Qg Gate Charge121 nC121 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation5.4 W5.4 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
SeriesSI7SI7-
Transistor Type1 P-Channel1 P-Channel-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min50 S50 S-
Fall Time100 ns100 ns-
Product TypeMOSFETMOSFET-
Rise Time25 ns25 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time200 ns200 ns-
Typical Turn On Delay Time20 ns20 ns-
Part # AliasesSI7463DP-T1SI7463DP-GE3-
Unit Weight0.017870 oz0.017870 oz-
Height-1.04 mm-
Length-6.15 mm-
Width-5.15 mm-
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