STGD3NB60FT4 vs STGD3NB60H vs STGD3NB60HD

 
PartNumberSTGD3NB60FT4STGD3NB60HSTGD3NB60HD
DescriptionIGBT Transistors N-Ch 600 Volt 3.0 AIGBT Transistors N-CH 600V 3A
ManufacturerSTMicroelectronics--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseDPAK-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.9 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C3 A--
Pd Power Dissipation60 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesSTGD3NB60F--
PackagingReel--
Continuous Collector Current Ic Max6 A--
Height2.4 mm--
Length6.6 mm--
Width6.2 mm--
BrandSTMicroelectronics--
Continuous Collector Current3 A--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity2500--
SubcategoryIGBTs--
Unit Weight0.012346 oz--
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