STP80NF55 vs STP80NF55 P80NF55 vs STP80NF55-0

 
PartNumberSTP80NF55STP80NF55 P80NF55STP80NF55-0
DescriptionMOSFET POWER MOSFET
ManufacturerSTMicroelectronics-ST
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-220-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current80 A--
Rds On Drain Source Resistance5 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge189 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation300 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
PackagingTube-Tube
Height15.75 mm--
Length10.4 mm--
SeriesSTB80NF55, STP80NF55-N-channel STripFET
Transistor Type1 N-Channel-1 N-Channel
Width4.6 mm--
BrandSTMicroelectronics--
Forward Transconductance Min150 S--
Fall Time65 ns-65 ns
Product TypeMOSFET--
Rise Time155 ns-155 ns
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time125 ns-125 ns
Typical Turn On Delay Time27 ns-27 ns
Unit Weight0.011640 oz-0.011640 oz
Package Case--TO-220-3
Pd Power Dissipation--300 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--80 A
Vds Drain Source Breakdown Voltage--55 V
Rds On Drain Source Resistance--6.5 mOhms
Forward Transconductance Min--150 S
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