2DD1766

2DD1766R-13 vs 2DD1766P-13 vs 2DD1766Q-13

 
PartNumber2DD1766R-132DD1766P-132DD1766Q-13
DescriptionBipolar Transistors - BJT 1000W 32VceoBipolar Transistors - BJT 1000W 32VceoBipolar Transistors - BJT 1000W 32Vceo
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYYY
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-89-3SOT-89-3SOT-89-3
Transistor PolarityNPNNPNNPN
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max32 V32 V32 V
Collector Base Voltage VCBO40 V40 V40 V
Emitter Base Voltage VEBO5 V5 V5 V
Collector Emitter Saturation Voltage800 mV800 mV-
Maximum DC Collector Current2.5 A2 A2 A
Gain Bandwidth Product fT220 MHz220 MHz220 MHz
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Series2DD172DD172DD17
Height1.5 mm1.5 mm1.5 mm
Length4.5 mm4.5 mm4.5 mm
PackagingReelReelReel
Width2.48 mm2.48 mm2.48 mm
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
DC Collector/Base Gain hfe Min180 at 500 mA, 3 V82120
Pd Power Dissipation1000 mW1000 mW1000 mW
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
Factory Pack Quantity250025002500
SubcategoryTransistorsTransistorsTransistors
Unit Weight0.001834 oz0.001834 oz0.001834 oz
DC Current Gain hFE Max-180-
Qualification--AEC-Q101
制造商 型号 描述 RFQ
Diodes Incorporated
Diodes Incorporated
2DD1766R-13 Bipolar Transistors - BJT 1000W 32Vceo
2DD1766P-13 Bipolar Transistors - BJT 1000W 32Vceo
2DD1766Q-13 Bipolar Transistors - BJT 1000W 32Vceo
2DD1766Q-13 Bipolar Transistors - BJT 1000W 32Vceo
2DD1766R-13 Bipolar Transistors - BJT 1000W 32Vceo
2DD1766P-13 Bipolar Transistors - BJT 1000W 32Vceo
2DD1766P 全新原装
2DD1766R 全新原装
2DD1766RDIDKR 全新原装
2DD1766P-7 全新原装
2DD1766Q 全新原装
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