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2MBI6

2MBI600NT-060 vs 2MBI600U2E-060 vs 2MBI600VE-060

 
PartNumber2MBI600NT-0602MBI600U2E-0602MBI600VE-060
DescriptionInsulated Gate Bipolar Transistor,600AI(C),600VV(BR)CES, N-Channel600A, 650V, N-CHANNEL IGBT
Manufacturer-FUJI-
Product Category-Module-
制造商 型号 描述 RFQ
2MBI600NT-060 Insulated Gate Bipolar Transistor,600AI(C),600VV(BR)CES, N-Channel
2MBI600U2E-060 600A, 650V, N-CHANNEL IGBT
2MBI600VE-060 全新原装
2MBI600VE-120-50 2 Pack IGBT VE-series, 600A, 1200V
2MBI600VN-120 全新原装
2MBI600VN-120-50 Insulated GateBipolarTransistor,600AI(C),1200VV(BR)CES, N-Channel
2MBI600VN-120-50-M Insulated GateBipolarTransistor,600AI(C),1200VV(BR)CES, N-Channel
2MBI600VN-120-50/SL600H1 全新原装
2MBI600VN-170-50 全新原装
2MBI600VXA-120E-50 IGBT, MODULE, DUAL N CHANNEL, 1.2KV, 800A, Transistor Polarity:Dual N Channel, DC Collector Current:800A, Collector Emitter Saturation Voltage Vce(on):1.85V, Power Dissipation Pd:3.35kW, Collecto
2MBI600VXA-120E-51 IGBT HPM
2MBI650VXA-170-50 全新原装
2MBI650VXA-170E-50 IGBT, MODULE, DUAL N CHANNEL, 1.7KV, 900A, Transistor Polarity:Dual N Channel, DC Collector Current:900A, Collector Emitter Saturation Voltage Vce(on):2.1V, Power Dissipation Pd:4.15kW, Collector
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