| PartNumber | 2N3737UB | 2N3737UB/TR | 2N3737 |
| Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT BJTs |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | N | N | N |
| Mounting Style | SMD/SMT | SMD/SMT | Through Hole |
| Package / Case | SMD-4 | LCC-3 | TO-46-3 |
| Packaging | Waffle | Reel | Foil Bag |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1 | 100 | 1 |
| Subcategory | Transistors | Transistors | Transistors |
| Technology | - | Si | - |
| Transistor Polarity | - | NPN | - |
| Configuration | - | Single | - |
| Collector Emitter Voltage VCEO Max | - | 40 V | - |
| Collector Base Voltage VCBO | - | 75 V | - |
| Emitter Base Voltage VEBO | - | 5 V | - |
| Collector Emitter Saturation Voltage | - | 0.9 V | - |
| Maximum DC Collector Current | - | 1.5 A | - |
| Minimum Operating Temperature | - | - 65 C | - |
| Maximum Operating Temperature | - | + 200 C | - |
| DC Current Gain hFE Max | - | 150 at 500 mA, 1 V | - |
| DC Collector/Base Gain hfe Min | - | 20 at 1 A, 1.5 V | - |
| Pd Power Dissipation | - | 1 W | - |