2N4401RL

2N4401RLRA vs 2N4401RLRAG vs 2N4401RLRM

 
PartNumber2N4401RLRA2N4401RLRAG2N4401RLRM
DescriptionBipolar Transistors - BJT 600mA 60V NPNBipolar Transistors - BJT 600mA 60V NPNTRANS NPN 40V 0.6A TO-92
ManufacturerON SemiconductorON-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSN--
Mounting StyleThrough Hole--
Package / CaseTO-92-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max40 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage0.75 V--
Maximum DC Collector Current0.6 A--
Gain Bandwidth Product fT250 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Height5.33 mm--
Length5.2 mm--
PackagingReel--
Width4.19 mm--
BrandON Semiconductor--
Continuous Collector Current0.6 A--
DC Collector/Base Gain hfe Min20--
Pd Power Dissipation625 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2000--
SubcategoryTransistors--
制造商 型号 描述 RFQ
ON Semiconductor
ON Semiconductor
2N4401RLRA Bipolar Transistors - BJT 600mA 60V NPN
2N4401RLRA TRANS NPN 40V 0.6A TO92
2N4401RLRPG TRANS NPN 40V 0.6A TO-92
2N4401RLRAG Bipolar Transistors - BJT 600mA 60V NPN
2N4401RLRM TRANS NPN 40V 0.6A TO-92
2N4401RLRMG TRANS NPN 40V 0.6A TO-92
2N4401RLRP Bipolar Transistors - BJT 600mA 60V NPN
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