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| PartNumber | 2N4921G | 2N49217 | 2N4921G , NAND512W3A-2SN |
| Description | Bipolar Transistors - BJT 3A 40V 30W NPN | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-225-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 40 V | - | - |
| Collector Base Voltage VCBO | 40 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 0.6 V | - | - |
| Maximum DC Collector Current | 1 A | - | - |
| Gain Bandwidth Product fT | 3 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | 2N4921 | - | - |
| Height | 11.04 mm | - | - |
| Length | 7.74 mm | - | - |
| Packaging | Bulk | - | - |
| Width | 2.66 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | 3 A | - | - |
| DC Collector/Base Gain hfe Min | 40 | - | - |
| Pd Power Dissipation | 30 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.023986 oz | - | - |
