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| PartNumber | 2N5401TA | 2N5401TAR |
| Description | Bipolar Transistors - BJT PNP Transistor General Purpose | Bipolar Transistors - BJT PNP Transistor General Purpose |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-92-3 Kinked Lead | TO-92-3 Kinked Lead |
| Transistor Polarity | PNP | PNP |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | - 150 V | - 150 V |
| Collector Base Voltage VCBO | - 160 V | - 160 V |
| Emitter Base Voltage VEBO | - 5 V | - 5 V |
| Maximum DC Collector Current | 0.6 A | 0.6 A |
| Gain Bandwidth Product fT | 300 MHz | 300 MHz |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Series | 2N5401 | 2N5401 |
| DC Current Gain hFE Max | 240 | 240 |
| Height | 4.58 mm | 4.58 mm |
| Length | 4.58 mm | 4.58 mm |
| Packaging | Ammo Pack | Ammo Pack |
| Width | 3.86 mm | 3.86 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Continuous Collector Current | - 600 mA | - 600 mA |
| DC Collector/Base Gain hfe Min | 60 | 60 |
| Pd Power Dissipation | 625 mW | 625 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 2000 | 2000 |
| Subcategory | Transistors | Transistors |
| Unit Weight | 0.006286 oz | 0.006286 oz |
