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| PartNumber | 2N6213 | 2N6212 | 2N6211 PBFREE |
| Description | Bipolar Transistors - BJT . . | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT PNP 275Vcbo 225Vceo 6.0Vebo |
| Manufacturer | Central Semiconductor | Microchip | Central Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | N | Y |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-66-2 | - | TO-66-2 |
| Transistor Polarity | PNP | NPN | PNP |
| Configuration | Single | - | Single |
| Collector Emitter Voltage VCEO Max | 350 V | - | 225 V |
| Collector Base Voltage VCBO | 400 V | - | 275 V |
| Emitter Base Voltage VEBO | 6 V | - | 6 V |
| Collector Emitter Saturation Voltage | 2 V | - | 1.4 V |
| Maximum DC Collector Current | 5 A | - | - |
| Gain Bandwidth Product fT | 20 MHz | - | 20 MHz |
| Minimum Operating Temperature | - 65 C | - | - 65 C |
| Maximum Operating Temperature | + 200 C | - | + 200 C |
| Series | 2N6213 | - | 2N62 |
| Packaging | Tube | Tray | Tube |
| Brand | Central Semiconductor | Microchip / Microsemi | Central Semiconductor |
| Continuous Collector Current | 2 A | - | 2 A |
| Pd Power Dissipation | 35 W | - | 35 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 30 | 1 | 30 |
| Subcategory | Transistors | Transistors | Transistors |
| Part # Aliases | 2N6213 PBFREE | - | - |
| Unit Weight | 0.206000 oz | - | - |
| DC Current Gain hFE Max | - | - | 100 at 1 A, 2.8 V |
| DC Collector/Base Gain hfe Min | - | - | 10 at 1 A, 2.8 V |