 |  | | |
| PartNumber | 2N6666 | 2N6666G | 2N6666G. |
| Description | Bipolar Transistors - BJT PNP Pwr Darlington | ||
| Manufacturer | Central Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Collector Emitter Voltage VCEO Max | 40 V | - | - |
| Collector Base Voltage VCBO | 40 V | - | - |
| Collector Emitter Saturation Voltage | 2 V | - | - |
| Maximum DC Collector Current | 8 A | - | - |
| Gain Bandwidth Product fT | 20 MHz | - | - |
| Series | 2N6666 | - | - |
| Brand | Central Semiconductor | - | - |
| Continuous Collector Current | 0.45 A | - | - |
| Pd Power Dissipation | 65 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 400 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.081130 oz | - | - |
