 |  | | |
| PartNumber | 2N7000BU | 2N7000B | 2N7000BU/2N7000TA |
| Description | MOSFET 60V N-Channel Sm Sig | ||
| Manufacturer | ON Semiconductor | Fairchild Semiconductor | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-92-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 200 mA | - | - |
| Rds On Drain Source Resistance | 1.2 Ohms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 400 mW | - | - |
| Configuration | Single | Single | - |
| Packaging | Bulk | Bulk | - |
| Height | 5.33 mm | - | - |
| Length | 5.2 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | 2N7000 | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | MOSFET | - | - |
| Width | 4.19 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Forward Transconductance Min | 0.1 S | - | - |
| Fall Time | 10 ns | 10 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 10 ns | 10 ns | - |
| Factory Pack Quantity | 10000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 10 ns | 10 ns | - |
| Typical Turn On Delay Time | 10 ns | 10 ns | - |
| Part # Aliases | 2N7000BU_NL | - | - |
| Unit Weight | 0.006314 oz | 0.006314 oz | - |
| Part Aliases | - | 2N7000BU_NL | - |
| Package Case | - | TO-226-3, TO-92-3 (TO-226AA) | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Through Hole | - |
| Supplier Device Package | - | TO-92-3 | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 400mW | - |
| Drain to Source Voltage Vdss | - | 60V | - |
| Input Capacitance Ciss Vds | - | 50pF @ 25V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 200mA (Tc) | - |
| Rds On Max Id Vgs | - | 5 Ohm @ 500mA, 10V | - |
| Vgs th Max Id | - | 3V @ 1mA | - |
| Gate Charge Qg Vgs | - | - | - |
| Pd Power Dissipation | - | 400 mW | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 200 mA | - |
| Vds Drain Source Breakdown Voltage | - | 60 V | - |
| Rds On Drain Source Resistance | - | 1.2 Ohms | - |
| Forward Transconductance Min | - | 0.1 S | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
| 2N7000BU | MOSFET 60V N-Channel Sm Sig | ||
| 2N7000B | 全新原装 | ||
| 2N7000BU/2N7000TA | 全新原装 | ||
| 2N7000BUTA | 全新原装 | ||
ON Semiconductor |
2N7000BU | MOSFET N-CH 60V 0.2A TO-92 | |
| 2N7000BU_T | MOSFET N-CH 60V TO92 |