 |  | | |
| PartNumber | 2PB709ASW,115 | 2PB709ASW | 2PB709ASW T/R |
| Description | Bipolar Transistors - BJT TRANS GP TAPE-7 | Bipolar Transistors - BJT TRANS GP TAPE-7 | |
| Manufacturer | Nexperia | NXP | - |
| Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-323-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | - 45 V | - | - |
| Collector Base Voltage VCBO | - 45 V | - | - |
| Emitter Base Voltage VEBO | - 6 V | - | - |
| Maximum DC Collector Current | - 200 mA | - | - |
| Gain Bandwidth Product fT | 80 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 340 | - | - |
| Height | 1 mm | - | - |
| Length | 2.2 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.35 mm | - | - |
| Brand | Nexperia | - | - |
| Continuous Collector Current | - 100 mA | - | - |
| DC Collector/Base Gain hfe Min | 210 | - | - |
| Pd Power Dissipation | 250 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | 2PB709ASW T/R | - | - |
| Unit Weight | 0.000176 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Nexperia |
2PB709ASW,115 | Bipolar Transistors - BJT TRANS GP TAPE-7 | |
| 2PB709ASW,115 | Bipolar Transistors - BJT TRANS GP TAPE-7 | ||
| 2PB709ASW | 全新原装 | ||
| 2PB709ASW115 | Now Nexperia 2PB709ASW - Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SC-70 | ||
| 2PB709ASW T/R | Bipolar Transistors - BJT TRANS GP TAPE-7 |