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| PartNumber | 2SA1162S-Y,LF | 2SA1162S-Y | 2SA1162S-Y, LF(D |
| Description | Bipolar Transistors - BJT SM Sig PNP Trans VCEO -50V IC -150mA | TRANS PNP 50V 0.15A S-MINI | |
| Manufacturer | Toshiba Semiconductor and Storage | - | |
| Product Category | Transistors (BJT) - Single, Pre-Biased | Transistors (BJT) - Single | - |
| Series | - | - | - |
| Packaging | Digi-ReelR Alternate Packaging | - | - |
| Package Case | TO-236-3, SC-59, SOT-23-3 | - | - |
| Mounting Type | Surface Mount | - | - |
| Supplier Device Package | S-Mini | - | - |
| Power Max | 150mW | - | - |
| Transistor Type | PNP | - | - |
| Current Collector Ic Max | 150mA | - | - |
| Voltage Collector Emitter Breakdown Max | 50V | - | - |
| DC Current Gain hFE Min Ic Vce | 70 @ 2mA, 6V | - | - |
| Vce Saturation Max Ib Ic | 300mV @ 10mA, 100mA | - | - |
| Current Collector Cutoff Max | 100nA (ICBO) | - | - |
| Frequency Transition | 80MHz | - | - |