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| PartNumber | 2SB1121S-TD-E | 2SB1121T-TD-E |
| Description | Bipolar Transistors - BJT BIP PNP 2A 25V | Bipolar Transistors - BJT BIP PNP 2A 25V |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y |
| Technology | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-243-3 | - |
| Transistor Polarity | PNP | PNP |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | - 25 V | - 25 V |
| Collector Base Voltage VCBO | - 30 V | - 30 V |
| Emitter Base Voltage VEBO | - 6 V | - 6 V |
| Collector Emitter Saturation Voltage | - 0.6 V | - 0.35 V |
| Gain Bandwidth Product fT | 150 MHz | 150 MHz |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Series | 2SB1121 | 2SB1121 |
| DC Current Gain hFE Max | 400 | 560 |
| Packaging | Reel | Reel |
| Brand | ON Semiconductor | ON Semiconductor |
| Continuous Collector Current | - 2 A | - 2 A |
| DC Collector/Base Gain hfe Min | 65 | - |
| Pd Power Dissipation | 500 mW | 1.3 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | Transistors | Transistors |
| Maximum DC Collector Current | - | - 5 A |
| Minimum Operating Temperature | - | - 55 C |
| Unit Weight | - | 0.001816 oz |
