2SB1204S-T

2SB1204S-TL-E vs 2SB1204S-TL vs 2SB1204S-TL-E , MAX6471T

 
PartNumber2SB1204S-TL-E2SB1204S-TL2SB1204S-TL-E , MAX6471T
DescriptionBipolar Transistors - BJT LOW-SATURATION VOLTAGE8000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
ManufacturerON SemiconductorSANYO-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMT--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max50 V--
Emitter Base Voltage VEBO6 V--
Maximum DC Collector Current8 A--
Gain Bandwidth Product fT130 MHz--
Maximum Operating Temperature+ 150 C--
Series2SB1204--
Height2.3 mm--
Length9.5 mm--
PackagingReel--
Width6.5 mm--
BrandON Semiconductor--
Continuous Collector Current4 A--
Pd Power Dissipation20 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity700--
SubcategoryTransistors--
Unit Weight0.009952 oz--
制造商 型号 描述 RFQ
2SB1204S-TL-E Bipolar Transistors - BJT LOW-SATURATION VOLTAGE
2SB1204S-TL 8000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1204S-TL-E , MAX6471T 全新原装
2SB1204S-TL-F 全新原装
ON Semiconductor
ON Semiconductor
2SB1204S-TL-E Bipolar Transistors - BJT LOW-SATURATION VOLTAGE
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