2SC2712-GR(TE

2SC2712-GR(TE85L,F vs 2SC2712-GR(TE85L,F) vs 2SC2712-GR(TE85R)

 
PartNumber2SC2712-GR(TE85L,F2SC2712-GR(TE85L,F)2SC2712-GR(TE85R)
DescriptionBipolar Transistors - BJT 150mA 50V
ManufacturerToshibaTOSHIBATOS
Product CategoryBipolar Transistors - BJTIC ChipsIC Chips
RoHSY--
Mounting StyleSMD/SMT--
Package / Case2-3F1A--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max50 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage0.1 V--
Maximum DC Collector Current0.15 A--
Gain Bandwidth Product fT80 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 125 C--
Series2SC2712--
DC Current Gain hFE Max400--
PackagingReel--
BrandToshiba--
Continuous Collector Current150 mA--
DC Collector/Base Gain hfe Min200--
Pd Power Dissipation150 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
制造商 型号 描述 RFQ
Toshiba
Toshiba
2SC2712-GR(TE85L,F Bipolar Transistors - BJT 150mA 50V
2SC2712-GR(TE85L,F Bipolar Transistors - BJT 150mA 50V
2SC2712-GR(TE85L,F) 全新原装
2SC2712-GR(TE85R) 全新原装
2SC2712-GR(TE85LF 全新原装
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