2SC2714-Y

2SC2714-Y(TE85L,F) vs 2SC2714-Y vs 2SC2714-Y(TE85L F)

 
PartNumber2SC2714-Y(TE85L,F)2SC2714-Y2SC2714-Y(TE85L F)
DescriptionBipolar Transistors - BJT Radio-Freq Bipolar NPN 20mA 100mW 30V
ManufacturerToshiba--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-346-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max30 V--
Collector Base Voltage VCBO40 V--
Emitter Base Voltage VEBO4 V--
Maximum DC Collector Current20 mA--
Gain Bandwidth Product fT550 MHz--
Series2SC2714--
DC Current Gain hFE Max200--
PackagingReel--
BrandToshiba--
Continuous Collector Current20 mA--
DC Collector/Base Gain hfe Min40--
Pd Power Dissipation100 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
制造商 型号 描述 RFQ
Toshiba
Toshiba
2SC2714-Y(TE85L,F) Bipolar Transistors - BJT Radio-Freq Bipolar NPN 20mA 100mW 30V
2SC2714-Y 全新原装
2SC2714-Y(TE85L,F) Bipolar Transistors - BJT Radio-Freq Bipolar NPN 20mA 100mW 30V
2SC2714-Y(TE85LF)CT-ND 全新原装
2SC2714-Y(TE85LF)DKR-ND 全新原装
2SC2714-Y(TE85LF)TR-ND 全新原装
2SC2714-Y(TE85L F) 全新原装
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