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| PartNumber | 2SC4215-O(TE85L,F) | 2SC4215-Y(TE85L,F) | 2SC4226-A |
| Description | Bipolar Transistors - BJT USM PLN TRANSISTOR Pd=100mW F=100MHz | Bipolar Transistors - BJT Radio-Freq Bipolar NPN 20mA 100mW 30V | RF Bipolar Transistors NPN Silicon 4.5GHz NF 1.2dB |
| Manufacturer | Toshiba | Toshiba | CEL |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | RF Bipolar Transistors |
| RoHS | Y | Y | Y |
| Packaging | Reel | Reel | - |
| Brand | Toshiba | Toshiba | CEL |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | RF Bipolar Transistors |
| Factory Pack Quantity | 3000 | 3000 | 1 |
| Subcategory | Transistors | Transistors | Transistors |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | SOT-323-3 | - |
| Transistor Polarity | - | NPN | - |
| Configuration | - | Single | - |
| Collector Emitter Voltage VCEO Max | - | 30 V | - |
| Collector Base Voltage VCBO | - | 40 V | - |
| Emitter Base Voltage VEBO | - | 4 V | - |
| Maximum DC Collector Current | - | 20 mA | - |
| Gain Bandwidth Product fT | - | 550 MHz | - |
| Series | - | 2SC4215 | - |
| DC Current Gain hFE Max | - | 200 | - |
| Continuous Collector Current | - | 20 mA | - |
| DC Collector/Base Gain hfe Min | - | 40 | - |
| Pd Power Dissipation | - | 100 mW | - |
| Unit Weight | - | 0.000176 oz | - |
| Technology | - | - | Si |
| Part # Aliases | - | - | NE85630-A |
