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| PartNumber | 2SC5865TLQ |
| Description | Bipolar Transistors - BJT NPN 60V 1A |
| Manufacturer | ROHM Semiconductor |
| Product Category | Bipolar Transistors - BJT |
| RoHS | Y |
| Mounting Style | SMD/SMT |
| Transistor Polarity | NPN |
| Configuration | Single |
| Collector Emitter Voltage VCEO Max | 60 V |
| Collector Base Voltage VCBO | 60 V |
| Emitter Base Voltage VEBO | 6 V |
| Maximum DC Collector Current | 1 A |
| Gain Bandwidth Product fT | 250 MHz |
| Maximum Operating Temperature | + 150 C |
| Series | 2SC5865 |
| DC Current Gain hFE Max | 120 at 100 mA, 2 V |
| Height | 0.85 mm |
| Length | 2.9 mm |
| Packaging | Reel |
| Width | 1.6 mm |
| Brand | ROHM Semiconductor |
| DC Collector/Base Gain hfe Min | 120 |
| Pd Power Dissipation | 500 mW |
| Product Type | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 3000 |
| Subcategory | Transistors |