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| PartNumber | 2SD1012G-SPA | 2SD1012G-SPA-AC | 2SD1012G |
| Description | Bipolar Transistors - BJT BIP NPN 0.7A 15V | Bipolar Transistors - BJT BIP NPN 0.7A 15V | |
| Manufacturer | ON Semiconductor | - | sanyo |
| Product Category | Bipolar Transistors - BJT | - | Transistors (BJT) - Single |
| RoHS | Y | - | - |
| Mounting Style | Through Hole | - | Through Hole |
| Transistor Polarity | NPN | - | NPN |
| Configuration | Single | - | Single |
| Collector Emitter Voltage VCEO Max | 15 V | - | - |
| Collector Base Voltage VCBO | 20 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 30 mV | - | 30 mV |
| Maximum DC Collector Current | 0.7 A | - | 0.7 A |
| Gain Bandwidth Product fT | 250 MHz | - | 250 MHz |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 125 C | - | + 125 C |
| Series | 2SD1012 | - | 2SD1012 |
| DC Current Gain hFE Max | 960 | - | 960 |
| Packaging | Bulk | - | Bulk |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | 0.7 A | - | 0.7 A |
| DC Collector/Base Gain hfe Min | 160 | - | - |
| Pd Power Dissipation | 250 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 3.880136 oz | - | - |
| Package Case | - | - | SPA-3 |
| Pd Power Dissipation | - | - | 250 mW |
| Collector Emitter Voltage VCEO Max | - | - | 15 V |
| Collector Base Voltage VCBO | - | - | 20 V |
| Emitter Base Voltage VEBO | - | - | 5 V |
| DC Collector Base Gain hfe Min | - | - | 160 |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor |
2SD1012G-SPA | Bipolar Transistors - BJT BIP NPN 0.7A 15V | |
| 2SD1012G-SPA-AC | Bipolar Transistors - BJT BIP NPN 0.7A 15V | ||
| 2SD1012G-SPA | Bipolar Transistors - BJT BIP NPN 0.7A 15V | ||
| 2SD1012G | 全新原装 |