 |  | | |
| PartNumber | 2SD1815S-TL-E | 2SD1815S-TL-H | 2SD1815S-TL |
| Description | Bipolar Transistors - BJT BIP NPN 3A 100V | Bipolar Transistors - BJT BIP NPN 3A 100V | |
| Manufacturer | ON Semiconductor | ON Semiconductor | SNAYO |
| Product Category | Bipolar Transistors - BJT | Transistors - Bipolar (BJT) - RF | Transistors (BJT) - Single |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | Through Hole | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 100 V | - | - |
| Collector Base Voltage VCBO | 120 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 150 mV | - | - |
| Maximum DC Collector Current | 6 A | - | - |
| Gain Bandwidth Product fT | 180 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | 2SD1815 | 2SD1815 | - |
| DC Current Gain hFE Max | 400 | - | - |
| Packaging | Reel | Reel | - |
| Brand | ON Semiconductor | - | - |
| DC Collector/Base Gain hfe Min | 140 | - | - |
| Pd Power Dissipation | 20 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 700 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.009929 oz | 0.063493 oz | - |
| Package Case | - | TO-252 | - |
| Pd Power Dissipation | - | 1 W | - |
| Collector Emitter Voltage VCEO Max | - | 100 V | - |
| Emitter Base Voltage VEBO | - | 6 V | - |
| Continuous Collector Current | - | 3 A | - |
| DC Collector Base Gain hfe Min | - | 70 | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
| 2SD1815S-TL-E | Bipolar Transistors - BJT BIP NPN 3A 100V | ||
| 2SD1815S-TL | 全新原装 | ||
ON Semiconductor |
2SD1815S-TL-H | Bipolar Transistors - BJT BIP NPN 3A 100V | |
| 2SD1815S-TL-E | Bipolar Transistors - BJT BIP NPN 3A 100V |