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| PartNumber | 2SD2211T100Q | 2SD2211T100R |
| Description | Bipolar Transistors - BJT DVR NPN 160V 1.5A | Bipolar Transistors - BJT DVR NPN 160V 1.5A |
| Manufacturer | ROHM Semiconductor | ROHM Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT |
| Transistor Polarity | NPN | NPN |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 160 V | 160 V |
| Collector Base Voltage VCBO | 160 V | 160 V |
| Emitter Base Voltage VEBO | 5 V | 5 V |
| Collector Emitter Saturation Voltage | 2 V | 2 V |
| Maximum DC Collector Current | 1.5 A | 1.5 A |
| Gain Bandwidth Product fT | 80 MHz | 80 MHz |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Series | 2SD2211 | 2SD2211 |
| DC Current Gain hFE Max | 120 at 100 mA, 5 V | 180 at 100 mA, 5 V |
| Height | 1.5 mm | 1.5 mm |
| Length | 4.5 mm | 4.5 mm |
| Packaging | Reel | Reel |
| Width | 2.5 mm | 2.5 mm |
| Brand | ROHM Semiconductor | ROHM Semiconductor |
| Continuous Collector Current | 1.5 A | 1.5 A |
| DC Collector/Base Gain hfe Min | 120 | 180 |
| Pd Power Dissipation | 2000 mW | 2000 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | Transistors | Transistors |
| Unit Weight | - | 0.004603 oz |