A3T23 stock, A3T23, A3T23H450W23SR6


PartNumber	A3T23H450W23SR6	A3T23H300W23SR6	A3T23H200W23SR6
Description	RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 87 W Avg., 30 V	RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 63 W Avg., 30 V
Manufacturer	NXP	NXP	-
Product Category	RF MOSFET Transistors	RF MOSFET Transistors	-
RoHS	Y	Y	-
Transistor Polarity	Dual N-Channel	Dual N-Channel	-
Technology	Si	Si	-
Vds Drain Source Breakdown Voltage	- 0.5 V, 65 V	- 5 V, 65 V	-
Gain	14.7 dB	15.6 dB	-
Output Power	87 W	63 W	-
Minimum Operating Temperature	- 40 C	- 40 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	ACP-1230S-4L2S	ACP-1230S-4L2S	-
Packaging	Reel	Reel	-
Operating Frequency	2300 MHz to 2400 MHz	2300 MHz to 2400 MHz	-
Type	RF Power MOSFET	RF Power MOSFET	-
Brand	NXP Semiconductors	NXP Semiconductors	-
Number of Channels	2 Channel	2 Channel	-
Product Type	RF MOSFET Transistors	RF MOSFET Transistors	-
Factory Pack Quantity	150	150	-
Subcategory	MOSFETs	MOSFETs	-
Vgs Gate Source Voltage	- 6 V, 10 V	- 6 V, 10 V	-
Vgs th Gate Source Threshold Voltage	1.3 V	1.3 V	-
Part # Aliases	935374125128	935374249128	-
Id Continuous Drain Current	-	3.2 A	-

Search Part Number : "A3T23", Match & Start with "A3T23" - Total : 3

制造商	型号	描述
NXP Semiconductors	A3T23H450W23SR6	RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 87 W Avg., 30 V
NXP Semiconductors	A3T23H300W23SR6	RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 63 W Avg., 30 V
	A3T23H200W23SR6	全新原装

A3T23