APT25GR

APT25GR120B vs APT25GR120BSCD10 vs APT25GR120BD15

 
PartNumberAPT25GR120BAPT25GR120BSCD10APT25GR120BD15
DescriptionIGBT Transistors FG, IGBT, 1200V, 25A, TO247IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8IGBT Transistors
ManufacturerMicrochipMicrochipMicrosemi Corporation
Product CategoryIGBT TransistorsIGBT TransistorsIGBTs - Single
RoHSYY-
TechnologySiSi-
PackagingTubeTubeTube
BrandMicrochip / MicrosemiMicrochip / Microsemi-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity11-
SubcategoryIGBTsIGBTs-
Series---
Unit Weight--1.340411 oz
Mounting Style--Through Hole
Tradename--Ultra Fast NPT-IGBT
Package Case--TO-247-3
Input Type--Standard
Mounting Type--Through Hole
Supplier Device Package--TO-247
Configuration--Single
Power Max--521W
Reverse Recovery Time trr---
Current Collector Ic Max--75A
Voltage Collector Emitter Breakdown Max--1200V
IGBT Type--NPT
Current Collector Pulsed Icm--100A
Vce on Max Vge Ic--3.2V @ 15V, 25A
Switching Energy--742μJ (on), 427μJ (off)
Gate Charge--203nC
Td on off 25°C--16ns/122ns
Test Condition--600V, 25A, 4.3 Ohm, 15V
Pd Power Dissipation--521 W
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 55 C
Collector Emitter Voltage VCEO Max--1.2 kV
Collector Emitter Saturation Voltage--2.5 V
Continuous Collector Current at 25 C--75 A
Gate Emitter Leakage Current--250 nA
Maximum Gate Emitter Voltage--30 V
Continuous Collector Current Ic Max--75 A
制造商 型号 描述 RFQ
Microchip / Microsemi
Microchip / Microsemi
APT25GR120B IGBT Transistors FG, IGBT, 1200V, 25A, TO247
APT25GR120S IGBT Transistors FG, IGBT, 1200V, 25A, TO-268
APT25GR120SD15 IGBT Transistors FG, IGBT-COMBI, 1200V, 25A, TO-268
APT25GR120SSCD10 IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
APT25GR120BSCD10 IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
APT25GR120BD15 IGBT Transistors
APT25GR120B IGBT 1200V 75A 521W TO247
APT25GR120S IGBT 1200V 75A 521W D3PAK
APT25GR120SD15 IGBT 1200V 75A 521W D3PAK
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