 |  | | |
| PartNumber | APT60GF120JRDQ3 | APT60GF120JDR | APT60GF120JRD |
| Description | IGBT Modules FG, IGBT-COMBI,1200V, 60A, SOT-227 | ||
| Manufacturer | Microchip | - | APT |
| Product Category | IGBT Modules | - | Module |
| RoHS | Y | - | - |
| Product | IGBT Silicon Carbide Modules | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 1.2 kV | - | - |
| Collector Emitter Saturation Voltage | 2.5 V | - | - |
| Continuous Collector Current at 25 C | 149 A | - | - |
| Gate Emitter Leakage Current | 100 nA | - | - |
| Pd Power Dissipation | 625 W | - | - |
| Package / Case | ISOTOP-4 | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tube | - | - |
| Brand | Microchip / Microsemi | - | - |
| Mounting Style | SMD/SMT | - | - |
| Maximum Gate Emitter Voltage | 30 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 1 | - | - |
| Subcategory | IGBTs | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APT60GF120JRDQ3 | IGBT Modules FG, IGBT-COMBI,1200V, 60A, SOT-227 | |
| APT60GF60JU2 | IGBT Modules | ||
| APT60GF120JRDQ3 | IGBT 1200V 149A 625W SOT227 | ||
| APT60GF120JDR | 全新原装 | ||
| APT60GF120JRD | 全新原装 | ||
| APT60GF120JRDX | 全新原装 |