 | | | |
| PartNumber | APTGL90DA120T1G | APTGL90DDA120T3G | APTGL90DH120T3G |
| Description | IGBT Modules DOR CC8109 | IGBT Modules DOR CC3136 | IGBT Modules Power Module - IGBT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| RoHS | Y | Y | Y |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
| Configuration | Single | Dual | Dual |
| Collector Emitter Voltage VCEO Max | 1.2 kV | 1.2 kV | 1.2 kV |
| Collector Emitter Saturation Voltage | 1.85 V | 1.85 V | 1.8 V |
| Continuous Collector Current at 25 C | 110 A | 110 A | 110 A |
| Gate Emitter Leakage Current | 600 nA | 600 nA | 600 nA |
| Pd Power Dissipation | 385 W | 385 W | 385 W |
| Package / Case | SP1-12 | SP3-32 | SP3-32 |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 100 C | + 100 C | + 100 C |
| Packaging | Tube | Tube | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 2.821917 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APTGL90DA120T1G | IGBT Modules DOR CC8109 | |
| APTGL90DDA120T3G | IGBT Modules DOR CC3136 | ||
| APTGL90DSK120T3G | IGBT Modules DOR CC3174 | ||
| APTGL90DH120T3G | IGBT Modules Power Module - IGBT |