 | | | |
| PartNumber | APTGV50H60BT3G | APTGV50H60T3G | APTGV50H120BTPG |
| Description | IGBT Modules Power Module - IGBT | IGBT Modules Power Module - IGBT | IGBT Modules Power Module - IGBT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| RoHS | Y | Y | Y |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Product | - | IGBT Silicon Modules | IGBT Silicon Modules |
| Configuration | - | Full Bridge | Full Bridge |
| Collector Emitter Voltage VCEO Max | - | 600 V | 1.2 kV |
| Collector Emitter Saturation Voltage | - | 1.5 V, 2 V | 1.7 V, 3.2 V |
| Continuous Collector Current at 25 C | - | 80 A, 65 A | 75 A, 70 A, 130 A |
| Gate Emitter Leakage Current | - | 600 nA, 400 nA | 100 nA, 400 nA |
| Pd Power Dissipation | - | 176 W, 250 W | 270 W, 312 W, 650 W |
| Package / Case | - | SP3-32 | SP6-P |
| Minimum Operating Temperature | - | - 40 C | - 40 C |
| Maximum Operating Temperature | - | + 100 C | + 100 C |
| Mounting Style | - | Chassis Mount | Chassis Mount |
| Maximum Gate Emitter Voltage | - | 20 V | 20 V |
| Unit Weight | - | - | 3.880136 oz |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APTGV50H60BT3G | IGBT Modules Power Module - IGBT | |
| APTGV50H60T3G | IGBT Modules Power Module - IGBT | ||
| APTGV50H120BTPG | IGBT Modules Power Module - IGBT | ||
| APTGV50H120BTPG | IGBT NPT BST CHOP FULL BRDG SP6P |